A high power laser diode is made up of two semiconductor layers, a P-type layer and an N-type layer. These layers are doped with different elements, such as gallium arsenide, to create a region where light can be amplified. In such a heterostructure of a bipolar interband laser, electrons and holes can recombine, releasing the energy. High power laser diodes (>10 Watts) are available at wavelengths from the near infrared through roughly the 2000nm region. The most common devices are in the range of 808nm through 980nm. Unlike their low-power counterparts, these semiconductors generate intense, focused light, delivering anywhere from several watts to kilowatts of optical. Laser diodes are enabling sophisticated applications, as the legacy advantages of these lasers pair with emerging benefits. More than 30 years ago, acclaimed physicist Edward Teller said, “No one should use a laser unless it's a diode laser.
[PDF Version]